ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 1 of 9 rev.1.3 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 5 i d @ tc = 100c continuous drain current, v gs @ 10v 3.1 i dm pulsed drain current 15 a for to-251/to-252 package 50 power dissipation for to-220f package 31.2 w for to-251/to-252 package 0.4 p d @tc = 25c linear derating factor for to-220f package 0.25 w/c v ds drain-source voltage 700 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=22.4mh 54 mj i ar avalanche current @ l=22.4mh 2.2 a t j t stg operating junction and storage temperature range -55 to +150 c v dss 700v r ds (on) 1.23 (typ.) i d 5a to-251 ssf5ns70g schematic diagram feathers: ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? lead free product the ssf5ns70g/d/f series mosfets is a new technology, which combines an innovative technology and advance process. this new technology achieves low r ds(on) , energy saving, high reliability and uniformity, superior power density and space saving. to-252 ssf5ns70d to-220f ssf5ns70f
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 2 of 9 rev.1.3 thermal resistance symbol characteristics typ. max. units for to-251/to-252 package 2.5 r jc junction-to-case for to-220f package 4 /w for to-251/to-252 package 75 r ja junction-to-ambient (t 10s) for to-220f package 80 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 700 v v gs = 0v, i d = 250a 1.23 1.4 v gs =10v,i d = 1a r ds(on) static drain-to-source on-resistance 2.9 t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.8 v t j = 125c 1 v ds = 700v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 8.3 q gs gate-to-source charge 2.3 q gd gate-to-drain("miller") charge 2.6 nc i d = 4a, v ds =100v, v gs = 10v t d(on) turn-on delay time 10.1 t r rise time 18.4 t d(off) turn-off delay time 16.8 t f fall time 14.8 ns v gs =10v, v ds =380v, r gen =18,i d =4.5a c iss input capacitance 272 c oss output capacitance 168 c rss reverse transfer capacitance 3.14 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 5 a i sm pulsed source current (body diode) 15 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.84 1.2 v i s =2.8a, v gs =0v t rr reverse recovery time 284 ns q rr reverse recovery charge 1395 nc t j = 25c, i f = i s , di/dt = 100a/s
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 3 of 9 rev.1.3 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 4 of 9 rev.1.3 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 5 of 9 rev.1.3 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6. typical capacitance vs. drain-to-source voltage
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 6 of 9 rev.1.3 mechanical data min nom max min nom max a 2.200 - 2.400 0.087 - 0.094 a1 0.950 - 1.150 0.037 - 0.045 b 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 c 0.450 - 0.550 0.018 - 0.022 c1 0.450 - 0.550 0.018 - 0.022 d 6.450 - 6.750 0.254 - 0.266 d1 5.200 - 5.400 0.205 - 0.213 e 5.950 - 6.250 0.234 - 0.246 e 2.240 - 2.340 0.088 - 0.092 e1 4.430 - 4.730 0.174 - 0.186 l 9.000 - 9.400 0.354 - 0.370 symbol dimension in millimeters dimension in inches to-251 package outline dimension
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 7 of 9 rev.1.3 min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) to-252 package outline dimension
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 8 of 9 rev.1.3 min nom max min nom max e 9.960 10.160 10.360 0.392 0.400 0.408 e1 9.840 10.040 10.240 0.387 0.395 0.403 e2 6.800 7.000 7.200 0.268 0.276 0.283 a 4.600 4.700 4.800 0.181 0.185 0.189 a1 2.440 2.540 2.640 0.096 0.100 0.104 a2 2.660 2.760 2.860 0.105 0.109 0.113 a3 0.600 0.700 0.800 0.024 0.028 0.031 c - 0.500 - - 0.020 - d 15.780 15.870 15.980 0.621 0.625 0.629 d1 8.970 9.170 9.370 0.353 0.361 0.369 h1 6.500 6.700 6.800 0.256 0.264 0.268 e p 3.080 3.180 3.280 0.121 0.125 0.129 p 1 1.400 1.500 1.600 0.055 0.059 0.063 p 2 0.900 1.000 1.100 0.035 0.039 0.043 p 3 0.100 0.200 0.300 0.004 0.008 0.012 l 12.780 12.980 13.180 0.503 0.511 0.519 l1 2.970 3.170 3.370 0.117 0.125 0.133 l2 0.830 0.930 1.030 0.033 0.037 0.041 q 1 3 o 5 o 7 o 3 o 5 o 7 o q 2 43 o 45 o 47 o 43 o 45 o 47 o b1 1.180 1.280 1.380 0.046 0.050 0.054 b2 0.760 0.800 0.840 0.030 0.031 0.033 b3 - - 1.420 - - 0.056 symbol dimension in millimeters dimension in inches 2.54bsc 0.10bsc to220f package outline dimension_gn
ssf5ns70g/d/f 700v n-channel mosfet www.goodark.com page 9 of 9 rev.1.3 ordering and marking information device marking: ssf5ns70g/d/f package (available) to-251(ipak)/to-252(dpak)/to-220f operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-251 80 60 4800 5 24000 to-252 75 48 3600 5 18000 to-220f 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
|
